Atomic scale analysis of self assembled GaAs/AlGaAs quantum dots grown by droplet epitaxy

In this letter we have performed a structural analysis at the atomic scale of GaAs/AlGaAs quantum dots grown by droplet epitaxy. The shape, composition, and strain of the quantum dots and the AlGaAs matrix are investigated. We show that the GaAs quantum dots have a Gaussian shape and that minor intermixing of Al with the GaAs quantum dot takes place. A wetting layer with a thickness of less than one bilayer was observed.