We have successfully controlled the surface structures of GaAs(001) by changing incident As-molecular species. Under As₄ fluxes, the c(4×4) reconstruction with Ga-As dimers [c(4×4)α structure] is obtained, but the formation of three As-As dimer structures [c(4×4)β structure] is kinetically limited. On the other hand, the structure change from the (2×4), through c(4×4)α, to c(4×4)β phases is observed under As₂ fluxes. We found that the c(4×4)α structure is energetically metastable and provides a kinetic pathway for the structure change between the (2×4) and c(4×4)β phases under As₂ fluxes.
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Ohtake et al. (2004) studied this question.
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