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Long and highly ordered amorphous silicon oxide nanowires (see Figure) have been prepared in bulk quantities by these authors. The wires formed on a Ga ball placed on top of a Si wafer, which acted as a source for the nanowires, in a quartz tube. The growth can be explained by dissolution of Si in molten Ga, followed by oxidation to SiO2, which induces the precipitation of the wires.
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Zheng et al. (2002) studied this question.
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