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Deep levels, the so-called DX centers, in the Al x Ga 1- x As alloy system grown by liquid-phase epitaxy (LPE) were investigated by junction-capacitance spectroscopy. The dependence of the activation energy of the DX center in Sn-doped Al x Ga 1- x As on the alloy composition was determined by DLTS. This dependence seems to reflect the change in the nature of the conduction bands in this alloy system. The other donor species studied: Si, Te and Se, were also found to form DX centers. An anomalously high concentration of DX centers was determined using low-temperature C - V techniques.
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Tachikawa et al. (1984) studied this question.
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