An easy method to determine carrier-capture cross sections: Application to GaAs

A new technique of measuring capture cross sections is presented, based on a simplified analysis of the kinetics of filling of the traps in the slow regime of filling. The main interest of this technique is that it uses large impulsions, easy to apply on any sample, contrary to previous work which needed very short impulsions. A simplified theory is also developed to extract capture cross sections from the experimental data. The results are compared with those obtained by other techniques on the trap E3, created by irradiation of electrons in n-type GaAs, showing very good agreement.