The combined effect of mechanical strain and electric field cycling on the ferroelectric performance of P(VDF-TrFE) thin films on flexible substrates and underlying mechanisms

bipolar switching cycles. We find that 20% reduction in the polarization upon mechanical cycling is due to the formation of cracks in P(VDF-TrFE) thin films whilst ca. 50% polarization reduction during purely electrical or mechano-electrical fatigue is concomitant with the development of bubbles in the top electrode of the devices which eventually coalesce to give rise to bursting and eventual delamination of the electrode. A detailed investigation into the electrical fatigue mechanisms shows that the fatigue is primarily driven by the degradation of the P(VDF-TrFE) thin films due to HF elimination triggered by a high enough electric field, also manifested by reduced crystallinity and a reduced number of total dipoles of P(VDF-TrFE) films. The results clearly suggest that polarization reduction upon electric field cycling i.e. electrical fatigue is a greater bottleneck in the use of flexible memory devices than the mechanical cycling.