Theoretical predictions are presented of electronic and optical properties of the Si/Ge (2:6) superlattice grown on (001) SiGe buffers. It is shown that the buffer layer on which the superlattice is grown controls the polarization isotropy of the fundamental cross-gap transition and may be used to engineer an optical window for direct gap behavior.
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M. A. Gell (1989) studied this question.
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