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The use of disk geometry, optically pumped semiconductor gain elements for high-power scalability and good transverse mode quality has been studied. A room-temperature TEM00 transverse mode, external-cavity GaAs disk laser has been demonstrated with 500 W peak-power output and 40% slope efficiency, when pumped by a Ti:Al2O3 laser. The conditions for diode laser pumping are shown to be consistent with available power level.
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Le et al. (1991) studied this question.
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