Large-area YBCO films for device fabrication

We have prepared YBCO thin films by a pulsed laser deposition (PLD) technique on substrates and on the naturally oxidized 2 in diameter silicon wafers with buffer layers. This large-area film PLD technique allows the preparation of homogeneous and reproducible YBCO films with high quality on classical and technical substrates. For 2 in silicon wafer, we obtained the critical temperature in the range from 87.5 K to 88.2 K and a critical current density at 77 K of from 0.53 to over the whole wafer.