InAs-AlSb heterostructure field-effect transistors fabricated using argon implantation for device isolation

We have fabricated planar heterostructure field-effect transistors with InAs quantum well channels and AlSb barrier layers. Argon implantation was used to form a damaged layer, which resulted in partial device to device isolation. A 1.5 μm gate device had a room-temperature extrinsic transconductance of 208 mS/mm.