Low-frequency noise measurements on n-InGaAs/p-InP junction field-effect transistor structures

Deep level analysis in the ohmic regime of ungated n-InGaAs/p-InP junction field-effect transistor structures was made by low-frequency noise measurements. The noise spectra exhibit two deep trap levels in the n-InGaAs channel with activation energies of 0.49 and 0.37 eV. The related capture cross sections are 7×10−15 and 4×10−16 cm2, respectively.