A novel nonvolatile memory with Si nanocrystals has been developed. It has a floating gate consisting of a thin poly Si film and Si nanocrystals. It could be written or erased when a low voltage of +3 V or -3 V was supplied to the gate electrode. On the other hand, no hysteresis was observed at +1 V or -1 V. These characteristics enable the realization of a random-access memory that operates with extremely low power consumption. In this paper, a memory cell array suitable for novel memory devices is also described. The cell array features well bitline technology and the cell area is reduced to 4 F2 (F: feature size) by winding trench isolation. Applying the novel device to the cell array enables realization of high-density, random-access, nondestructive readout and ultralow-power memories.
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Shibata et al. (2003) studied this question.