In-situ nanostructured film formation during physical vapor deposition

An approach to directly make controlled nanostructured films in situ with physical vapor thin film deposition is presented. Co films were formed into lines with 3.2±0.8 nm thickness and were regularly spaced 550±20 nm apart on a Si(100) surface. The line pattern results during pulsed laser deposition of Co simultaneous with two-beam laser interference irradiation of the Si surface. Preliminary results indicate that preferential evaporation is not the primary mechanism. This patterning is likely due to anisotropic diffusion modified growth of Co under thermal gradients. This one step patterning process, without need of any pre- or post-patterning of the substrate or film, is promising as an economical and simple nanostructured film fabrication approach.