Highly sensitive work function hydrogen gas sensor based on PdNPs/SiO2/Si structure at room temperature

Fabrication of highly sensitive PdNPs/SiO 2 /Si hydrogen gas sensor with fast response/recovery time at the room temperature. The response time and recovery time for 1% hydrogen concentration at room temperature were 1.2 s and 10 s respectively. • The response time for 0.5% and 1% hydrogen concentration were 2.5 s and 1.2 s respectively. • The recovery time for 0.5% and 1% hydrogen concentration were 7.5 s and 10 s respectively. • For the PdNPs/SiO 2 /Si MOS capacitor hydrogen sensor the response is 96%. In this study, fabrication of highly sensitive PdNPs/SiO 2 /Si hydrogen gas sensor using experimental and theoretical methods has been investigated. Using chemical method the PdNPs are synthesized and characterized by X-ray diffraction (XRD). The average size of PdNPs is 11 nm. The thickness of the oxide film was 20 nm and the surface of oxide film analyzed using Atomic-force microscopy (AFM). The C-V curve for the PdNPs/SiO 2 /Si hydrogen gas sensor in 1% hydrogen concentration and at the room temperature has been reported. The response time and recovery time for 1% hydrogen concentration at room temperature were 1.2 s and 10 s respectively. The response (R%) for PdNPs/SiO 2 /Si MOS capacitor hydrogen sensor was 96%. The PdNPs/SiO 2 /Si MOS capacitor hydrogen sensor showed very fast response and recovery times compared to SWCNTs/PdNPs, graphene/PdNPs, nanorod/PdNPs and nanowire/PdNPs hydrogen gas sensors.