Auger-electron spectra of Pd₂Si formed by reactive interaction of ultrathin Pd deposits with clean and native oxide-covered Si substrates at elevated temperatures exhibit an additional peak at about 313 eV, which is not present in spectra of Pd alone. A clear correlation of the peak intensity with segregation of Si was found, leading to the conclusion that its origin is a plasmon loss of about 17 eV in the Si overlayer being excited by Pd Auger electrons of energy 330 eV.
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Antón et al. (1987) studied this question.
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