Ion-assisted deposition of lanthanum fluoride thin films

Ion-assisted deposition has been used to deposit lanthanum fluoride thin films with near-unity film packing densities and no significant increase in absorption. Rutherford backscattering analysis has determined the effect of ion bombardment on the film stoichiometries including the degree of fluorine deficiency. Oxygen atoms or compounds appear to occupy most of the available anion vacancies if sufficient oxygen is available in the ion beam or the residual atmosphere.