We report reproducible realization of GaAs/Al0.25 Ga0.75 As(100) inverted heterojunctions with liquid-nitrogen electron mobilities in excess of 105 cm2 /(V s). This is made possible through use of reflection high-energy electron-diffraction (RHEED) intensity dynamics determined optimized growth conditions, but without the use of short-period superlattices as buffers or spacer layers.
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Cho et al. (1988) studied this question.
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