Quantitative Wear Surface Analysis of SiC Using a Multiple-Technique Approach

The wear process for SiC in air has been quantitatively characterized using a combination of scanning electron microscopy/energy dispersive X-ray spectroscopy (SEM/EDXS), X-ray photoemission spectroscopy (XPS), and secondary ion mass spectrometry (SIMS). Analysis by SEM/EDXS shows the surface microstructure and major elements present, XPS reveals species present on the surface and their chemical environment (e.g. oxide versus carbide), and SIMS indicates the species present and the depth to which they occur. The results of these techniques were correlated with the load, speed, and time-of-contact conditions experienced during the wear process. The wear mechanism was demonstrated to be initially controlled by the deformation and oxidation of free silicon, followed by abrasion of the oxide, and oxidation of SiC and freshly exposed silicon. 12 references.