A new design for an injectorless quantum cascade laser resulting in a threshold current density of 0.57 kA/cm2 at 300 K and a maximum operation temperature of 360 K is presented. The active zone is realised in the strain compensated material system Al(In)As-(Ga)InAs using AlAs barriers for increasing the T0 and InAs for strain compensation. Additionally the laser performance was improved compared to previous work.
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Katz et al. (2008) studied this question.
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