Facile Fabrication Procedure for C60-Doped Silicon Oxide Thin Films

C60-doped silicon oxide thin films can be prepared easily by sol-gel processing using a mixture of phenyltriethoxysilane and tetraethoxysilane as the silicon oxide sources. Preparation of C60-dissolved single-phase starting solutions is practicable by employing phenyltriethoxysilane which acts as a solubilization agent of C60 as well as the silicon oxide source.