Normally-OFF Al2O3/AlGaN/GaN MOS-HEMT on 8 in. Si with Low Leakage Current and High Breakdown Voltage (825 V), Freedsman, Joseph J., Egawa, Takashi, Yamaoka, Yuya, Yano, Yoshiki, Ubukata, Akinori, Tabuchi, Toshiya, Matsumoto, Koh
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Freedsman et al. (2014) studied this question.
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