Temperature-Agnostic Pt/Au Ohmic Contacts on n-Type Gallium Nitride for Self-Aligned MOSFETs

Five alternative metals are investigated as ohmic contacts ton-GaN including Cr/Au, Mo/Au, Pt/Au, Pd/Au, and Ge/Au. Ti-based contacts are traditionally used for ohmic contacts onn-GaN. However, conventional Ti/Al/Ni/Au metallization is found to be incompatible with a self-aligned process for GaN trench MOSFETs due to wet etch restrictions. Therefore, an alternative metallization is needed that is unreactive to the etch chemistry used in the self-aligned process. Additionally, the contact should remain ohmic following anneal at 900°C so that contact formation can precede the anneal required forp-dopant activation. In the present work, ann-GaN bilayer, consisting of a thin heavily doped contact layer (n0= 1x1020cm-3) atop a thick lesser doped layer, is used to demonstrate ohmic contacts of alternative metals with low specific contact resistance and extended thermal budget. Cr/Au ohmic contacts are demonstrated up to anneal temperatures of 800°C, an increase of 200°C compared to the highest known reports for Cr/Au contacts onn-GaN. Pt/Au metallization is demonstrated as an ohmic contact ton-GaN for the first time and exhibits true temperature-agnostic behavior up to anneal temperatures of 900°C with specific contact resistance that is near parity with Ti/Al/Ni/Au. The temperature-agnostic behavior of Pt/Au ohmic contacts on then-GaN bilayer, in addition to chemical compatibility with the self-aligned process, positions Pt/Au contacts as a key enabling element for self-aligned trench MOSFETs on GaN.