Review of gallium oxide based field-effect transistors and Schottky barrier diodes

Gallium oxide (Ga 2 O 3 ), a typical ultra wide bandgap semiconductor, with a bandgap of ∼ 4.9 eV, critical breakdown field of 8 MV/cm, and Baliga’s figure of merit of 3444, is promising to be used in high-power and high-voltage devices. Recently, a keen interest in employing Ga 2 O 3 in power devices has been aroused. Many researches have verified that Ga 2 O 3 is an ideal candidate for fabricating power devices. In this review, we summarized the recent progress of field-effect transistors (FETs) and Schottky barrier diodes (SBDs) based on Ga 2 O 3 , which may provide a guideline for Ga 2 O 3 to be preferably used in power devices fabrication.