A set of closed hydrodynamiclike equations is derived from Boltzmann's transport equation (BTE) describing charge transport in semiconductors. The production terms are modeled as relaxation terms consistently with the Onsager reciprocity principle. Stationary and homogeneous solutions are explicitly treated. The form of the production terms is checked by applying the Grad method of moments to the BTE. Finally the model is compared with Monte Carlo simulations for silicon.
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Anile et al. (1995) studied this question.
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