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January 1, 1986IEEE Transactions on Electron Devices

Numerical analysis of switching characteristics in SOI MOSFET's

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KKK. KatōNagasaki UniversityKTKenji TaniguchiHiroshima University

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Katō et al. (1986) studied this question.

synapsesocial.com/papers/6a891784f1df03d55b28b7e0https://doi.org/10.1109/t-ed.1986.22449
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