A Monte Carlo study for minority-electron transport in p-GaAs

Minority-electron transport in p-GaAs with a wide range of acceptor doping concentration from 1017 to 1019 cm−3 is studied in detail. Using the Monte Carlo method in which electron-hole interactions are taken into account, electron transport properties in p-GaAs, such as drift velocity and electron temperature, are calculated. The calculated results show good agreement with the experimental ones. Furthermore, in order to make the features of minority-electron transport clear, the electron transport properties in n-GaAs, where electrons act as majority carriers, are also calculated. In comparison with majority-electron transport, drift velocity, and electron temperature for the minority electron are greatly reduced. Throughout the study, it is shown that the interaction with holes is essential for minority-electron transport in p-GaAs.