A strain-balanced, AlInAs/InGaAs/InP quantum cascade laser structure, designed for light emission at 4.0 μm using nonresonant extraction design approach, was grown by molecular beam epitaxy. Laser devices were processed in buried heterostructure geometry. An air-cooled laser system incorporating a 10-mm × 11.5-μm laser with antireflection-coated front facet and high-reflection-coated back facet delivered over 2 W of single-ended optical power in a collimated beam. Maximum continuous-wave room temperature wall plug efficiency of 5.0% was demonstrated for a high-reflection-coated 3.65-mm × 8.7-μm laser mounted on an aluminum nitride submount.
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Lyakh et al. (2010) studied this question.
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