An Example of Nonuniqueness of Stationary Solutions in Semiconductor Device Models

A numerical example is given of a semiconductor device model in one dimension, with constant carrier mobilities and dielectric constant, and no generation‐recombination term, which nonetheless exhibits multiple stationary solutions. The device model considered has three p‐n junctions, and has (at least) three solutions, two stable, one unstable, for values of applied voltage above a rather moderate threshold value. In this model, bifurcation of solutions does not occur; the I—V plot for this model contains two distinct curves, at least for values of applied voltage below breakdown.