Analytical approximations for the multiplication factors Mnand Mpin Ge and Si one-sided abrupt junctions are given. The resulting expressions account for different α and β ionization rates and are quite accurate. With further approximations on the ionization integrals, very simple expressions of 1 -- 1/M both for electron and holes in the range of very low multiplication are obtained, depending from a single ionization rate.
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P. Spirito (1974) studied this question.
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