To protect C-MOS/SOS LSI circuits from electrostatic discharge and resulting dielectric breakdown of the gate insulator, various gate-protection networks are employed. This paper reports on the evaluation of high-voltage diodes, Zener diodes, distributed diode-resistor combinations, and spark-gap devices for use in gate protection network applications. Results of pulse-power burnout, current-voltage (dc) characterization, bias-temperature stress, and radiation effects on individual test devices are analyzed to provide guidelines for protection, circuit selection, and design.
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Pancholy et al. (1978) studied this question.
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