The ability of UV laser radiation at 248 nm to cause the photoablation of SiOx films is demonstrated. Given the relatively low doses necessary to ablate significant SiOx thicknesses and the excellent etched wall verticality obtained, it appears that SiOx might be a viable UV photoresist. A brief discussion of the mechanisms leading to SiOx photoablation is presented.
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Fiori et al. (1985) studied this question.