Screening parametrisations are used to study the fine structure separations of the ns 2 np 2 P ground state terms in the Al, Ga, In and Tl isoelectronic sequences, and of the ns 2 np 5 2 P ground state terms in the Cl, Br, I and At isoelectronic sequences. Isoelectronic and homologous regularities are exhibited which permit extrapolative predictions of these separations to high states of ionisation.
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Curtis et al. (1983) studied this question.
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