An apparatus for the measurement of galvanomagnetic effects in high resistance semiconductors is described. The apparatus allows the resistivities of samples to be measured whose resistances fall within the range 10−1 to 1012 Ω. The Hall coefficients of these samples can also be determined with the apparatus as long as the charge carrier mobilities of the samples exceed 1 cm2/v sec. A discussion is given of the fundamental limitations of Hall coefficient measuring equipment.
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Fischer et al. (1961) studied this question.
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