For the first time as‐grown laser scattering tomography defects (LSTD), twins, was observed directly in the Si wafer with transmission electron microscopy (TEM). The shape of the grown‐in LSTDs, estimated from the TEM images, were octahedral and tetrahedral, with sidewalls lying in the {111} plane. The size of grown‐in LSTDs are approximately 100 nm. The oxygen concentration inside the grown‐in LSTD was close to the detection limit of TEM‐EDX.
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Nishimura et al. (1996) studied this question.