We report an electro-optic absorption modulator based around a metal-insulator-semiconductor field-effect transistor structure in which the active semiconductor is the polymer poly(2,5-dimethoxy-p-phenylene vinylene). It incorporates a single optical waveguide formed by the polymer, insulator, and a polyimide top layer which is ribbed to define the guide laterally. Charge injection creates polaron and bipolaron states which change the subgap absorption between 2 and 1.4 μm and between 800 nm and the band edge at 600 nm.
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Parker et al. (1993) studied this question.
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