Nondestructive electroluminescence characterization of as-grown semiconductor optoelectronic device structures using indium–tin–oxide coated electrodes

We describe an arrangement for nondestructive electroluminescence measurements to characterize as-grown semiconductor optoelectronic device structures using indium–tin–oxide film coated on glass as a separate transparent electrode. The usefulness of this technique, and its applicability over a range of temperatures, are demonstrated by measurements on pieces of bare as-grown wafers of two different laser structures.