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Multiquantum well structures of InP/Ga0.47In0.53As were grown by metalorganic molecular beam epitaxy for the fabrication of infrared photodetectors. The thickness and composition uniformity of the wells was determined by high-resolution x-ray diffraction, photoluminescence, and photoluminescence excitation experiments. The intersubband absorption spectrum of the multiquantum well structures optimized for infrared detection is found to be in the 7–8 μm range.
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Ritter et al. (1991) studied this question.
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