MOMBE growth of high-quality InP and GaInAs bulk, heterojunction and quantum well layers

Metal-organic molecular beam epitaxy of high-quality InP and GaInAs layers is presented. A T=4 K exciton-dominated photoluminescence, together with T=77 K mobilities exceeding 50000 cm 2 V -1 s -1 have been obtained on InP epilayers, with an n-type carrier concentration in the low 10 15 cm -3 range. Ga x In 1-x As ternary compounds have been grown on 2" InP wafers with excellent uniformity and reproducibility. Heterostructures such as single heterojunctions and quantum wells have been made with good electrical and optical properties. GaInAs/InP quantum wells as thin as one monolayer with energy shifts as much as 519 meV higher than the bulk have been grown. A two-dimensional electron gas with mu (300 K)=10000 cm 2 V -1 s -1 and mu (4 K)=80000 cm 2 V -1 s -1 has been measured.