A self-assembled thin film edge emitter has been fabricated. The unique fabrication process requires only a tetrahedral amorphous carbon (ta-C) thin film with one photolithography step to generate a three-dimensional structure. A high emission site density was achieved compared with that obtained from a flat ta-C film emitter using the same measurement technique. In the high field regime the emission obtained was based on the Fowler–Nordheim emission mechanism. Using the Fowler–Nordheim equation we calculated the field enhancement factor of this emitter to be 80. The potential of ta-C thin films as hard masks for silicon etching in KOH solution was also investigated.
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Tsai et al. (2002) studied this question.
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