This study proposes a new scheme for rail‐to‐rail input StrongARM latch comparator. Additional differential input p‐type metal‐oxide‐semiconductor (PMOS) and cross‐coupled n‐type metal‐oxide‐semiconductor (NMOS) transistors have been introduced to achieve the rail‐to‐rail input range. The proposed scheme offers low‐energy consumption of 15.2 fJ and a high speed of 3 GHz, which makes it attractive for energy harvested Internet of Thing applications. The proposed architecture is fabricated in 65 nm complementary metal‐oxide‐semiconductor (CMOS) technology and the functionality is verified using post‐layout simulations and chip measurements.
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Al-Qadasi et al. (2020) studied this question.
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