The temperature dependence of the non-ohmic current and switching characteristics of a chalcogenide glass

The current-voltage characteristics of the blocking state (OFF state) of formed monostable devices of amorphous films of Si 12 Te 48 As 30 Ge 10 are described at temperatures between 7 and 140K. Between 7 and 40K it is suggested that the characteristics are consistent with a Fowler-Nordheim description of the current. At higher temperatures it has been supposed that the current is controlled by space-charge existing in traps at the Fermi level. The threshold voltage, holding current and holding voltage have also been examined at temperatures between 7 and 240K. Between 7 and 40K, it is concluded that monostable switching could arise from an impact ionization process.