Answers are grounded in this paper and cite their sources.
The spatial distribution of luminescence intensity for edge emission and extrinsic Si related bands is studied for Si-doped LEC grown GaAs crystals. Free carrier distribution is determined from the halfwidth and peak position of intrinsic luminescence and from the position of coupled LO-phonon–plasmon modes in Raman spectra. An increase of the luminescence intensity with carrier concentration is observed up to n ≈ 1018 cm−3, the sharp decrease for higher concentrations is ascribed to Auger recombination. The temperature dependence of three Si-related luminescence bands at 1.35 eV (A), 1.2 eV (B), and 1.0 eV (C) is measured. The similarity of the temperature behaviour of the A band with EL2 centres supports its assignment to (Si–AsGa) donors.
No takes yet. Share an insight, caveat, or question.
Pastrňák et al. (1989) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: