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High integrity thin gate oxide films have been grown at a temperature as low as 450° C by direct oxidation of silicon. The bombardment of the silicon surface by low energy ions of argon and oxygen mixed plasma is utilized to activate the oxidation process. Dielectric breakdown field intensity of the oxide film of 12 MV/cm is obtained by the MOS capacitor evaluation. The precise control of the bombarding energy is essential in achieving the high-integrity thin gate oxide films.
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Watanabe et al. (1995) studied this question.
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