GaAs bipolar transistors and ring-oscillators were fabricated by ion implantation into VPE structures. The transistor and circuit performance was tested between 25°C and 400°C. Leakage currents determine the useful temperature range. Present GaAs circuits fail at approximately 390°C due to the metallization technology.
No takes yet. Share an insight, caveat, or question.
Doerbeck et al. (1982) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: