An apparatus to measure the ordinary and photo-induced Hall effect on solid electrolyte crystals, ionic crystals, and semiconductors is described. A 75 Hz alternating current and a 50 Hz magnetic field are used, where the induced Hall voltage is observed by use of a phase-sensitive detector operating at the sum frequency of 125 Hz. The apparatus has a noise level of the order of 10 -10 V; minimum detectable Hall voltage is shown to be 1 nV. Results of measurements on RbAg 4 I 5 single crystals are also presented.
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Kaneda et al. (1973) studied this question.