Model and Characterization of VO₂ Thin-Film Switching Devices

This paper investigates and models the dc behavior of thin-film-based switching devices. The devices are based on sputtered vanadium dioxide thin films that transition from 200 kΩ/□ at room temperature to 390 Ω/□ at temperatures above 68°C, with the transition occurring over a narrow temperature range. The device resistance is characterized over temperature and under current- and voltage-sourced electrical bias. The finite-element model predicts the device's nonuniform switching behavior. Electrothermally heated devices show the same transition ratio and switching behavior as externally heated devices suggesting a purely electrothermal switching mechanism.