We utilize an inverted heterostructure grown on (311)A GaAs to realize a two-dimensional hole gas (2DHG) with a built-in back gate. The density of the 2DHG is easily and reproducibly varied between 5×109 and 5×1011 cm−2. The mobility of the 2DHG is highly anisotropic in the (311)A plane.
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Hanein et al. (1997) studied this question.
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