Domain wall magnetoresistance in BiFeO 3 thin films measured by scanning probe microscopy

We measure the magnetotransport properties of individual 71° domain walls in multiferroic BiFeO 3 by means of conductive—atomic force microscopy (C-AFM) in the presence of magnetic fields up to one Tesla. The results suggest anisotropic magnetoresistance at room temperature, with the sign of the magnetoresistance depending on the relative orientation between the magnetic field and the domain wall plane. A consequence of this finding is that macroscopically averaged magnetoresistance measurements for domain wall bunches are likely to underestimate the magnetoresistance of each individual domain wall.