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Voltage, temperature, and intensity dependence of saturable absorption in InGaAs/InP multiple quantum wells are investigated and related to the lasing characteristics of intracavity loss modulated InGaAs/InP quantum well lasers. Bistability in the static laser light output/absorber voltage characteristic arises from the shape of the measured absorption/voltage/intensity surface of the quantum well absorber. This surface is little changed in the temperature range 0–100 °C. A consequence of this fact is that an intracavity absorber modulates laser threshold more efficiently at higher substrate temperatures.
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O’Gorman et al. (1991) studied this question.
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