We present a model for Raman efficiency in a planar microcavity. We calculate the modifications of excitation and emission induced by optical confinement in a 3λ2-thick GaAs/AlAs multiple quantum well grown on a semiconductor-distributed Bragg reflector. Such a structure constitutes a low-finesse asymmetric microcavity. Both excitation and emission are shown to depend strongly on photon frequency, leading to enhancements of up to a factor of 50 for a double resonance process. The cavity-induced Raman efficiency modifications are tested by folded-acoustic- and optical-phonon scattering experiments, finding quantitative accord with theory.
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Fainstein et al. (1996) studied this question.
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